InGaN

基本解释

InGaN Films Grown by Metalorganic Chemical Vapor Deposition[J].
引用该论文江风益;李述体;王立;彭学新;熊传兵.
The goal of this thesis is to grow InGaN at different temperatures in the form of GaN/InGaN double-heterojunction nanorods.
中文摘要在本论文中主要以不同生长温度的氮化铟镓为研究目标，所生长的结构为氮化镓/氮化铟镓双异质结构奈米柱。
In this research, the optical properties and material nano-structures of an undoped and a Si-doped InGaN thin films beyond the critical layer thickness are studied.
摘要:在本研究中，我们针对大于临界厚度的无掺杂与矽掺杂的两片氮化铟镓薄膜样品，有系统地探讨了它们的光学与材料特性。
Observation on therapeutic efficacy of Jinhuang p ingan decoction on intestinal adhesion [J ].Integr Tradit Chin West Med Pract Crit Care Med, 1998, 5(10): 452-4.
"金黄平安汤"治疗肠粘连的临床疗效观察[J].;中西医结合实用临床急救;1998;5(10):452-4
By analyzing the flip chip structure of high power InGaN blue +YAG fluorescence powders white light emitting diode (LED), it shows that it can improve the luminous and heat dissipation efficacy.
通过对高功率InGaN(蓝)LED倒装芯片结构+YAG荧光粉构成白光LED的分析,可以得出这种结构能提高发光效率和散热效果的结论。