SiNWs
基本解释
- 硅纳米线
英汉例句
- On the other hand, utilizing Rapid Thermal Processing (RTP) system, SiNWs were prepared on the same substrates as above.
另外,通过1150℃和1200℃下30s的快速热处理(Rapid Thermal Processing,RTP),在镀金硅衬底上生长出SiNWs。 - In high temperature deposition area, highly curved and tangled SiNWs, whose growth mechanism is the VLS (Vapor-Liquid-Solid) mechanism, have been obtained.However, in lower temperat...
在低温沉积区,高度定向生长的直硅纳米线,规整地排列在硅衬底表面,其生长机制是氧化辅助生长机制。 - Keywords thermal evaporation;SiNWs;VLS mechanism;OG mechanism;
热蒸发;硅纳米线;气-液-固机制;氧化辅助生长机制; - Silicon Nanowires (SiNWs)
硅纳米线(SiNWs) - SiNW
硅纳米线