AlGaInP

基本解释

Optimum Al Composition Analysis on AlGaInP Quaternary Double Heterojunction Light-emitting Diodes[J].
引用该论文陈贵楚;范广涵;陈练辉;刘鲁.
For red LEDs, the AlGaInP epitaxy layer are commonly grown on GaAs substrate (sub.) for lattice constant matching requirement.
对红色发光二极体(LED)而言，由于晶格常数之要求，通常将发光材料磷化铝铟镓成长于砷化镓基板上。
Application of wafer bonding in AlGaInP high brightness LED devices
晶片键合在AlGaInP发光二极管中的应用
A novel AlGaInP thin-film light emitting diode with Omni directional reflector
新型全方位反射铝镓铟磷薄膜发光二极管
Characteristics of AlGaInP Red Laser Diode and Its Thermal Property Analysis
红色AlGaInP激光器的特性及热特性分析