high-electron-mobility transistors
常见例句
- Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT).
在變緩沖層高遷移率晶躰琯（MM_HEMT）器件中，二維電子氣的輸運性質對器件性能起著決定作用。 返回 high-electron-mobility transistors