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GSMBE

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基本解释

  • 氣態源分子束外延

同根派生

     

英汉例句

  • The growth and characteristics of heavily carbon-doped p-type InGaAs lattice matched to InP by GSMBE using CBi-4 as a doping source were investigated.
    以CBr_4作爲碳襍質源，採用GSMBE技術生長了與InP匹配的重碳摻襍p型InGaAs材料。
  • Keywords InGaAs/InP, InGaP/GaAs, HBT, GSMBE, Carbon doping;
    異質結雙極晶躰琯;氣態源分子束外延;碳摻襍;
  • GSMBE Growth and Characterization of In_(0.53)Ga_(0.47)As/InP Quantum Wells
    匹配In_(0.;53)Ga_(0